| 摘要 |
1,183,977. Semi-conductor device. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 20 June, 1967 [21 June, 1966], No. 28326/67. Heading H1K. A radiation-sensitive semi-conductor target plate comprises a single-crystal semi-conductor body of one conductivity type having a surface zone 150 Š thick or less of the opposite conductivity type formed by diffusion of a dopant. The preferred depth of diffusion is 100 Š or in the case of silicon not more than ten times the lattice constant. The dopant is preferably boron. The transverse resistance of the surface layer is such that grooves are not required to form separate junctions.
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