发明名称 METHOD FOR PRODUCING POLYCRYSTALLINE SILICON SUBSTRATE FOR SOLAR CELL
摘要 <p>Disclosed is a method for producing a multicrystalline silicon substrate for solar cells comprising: a metal deposition step for depositing such metal particles as platinum and silver on the surface of the substrate by electroless-plating chloroplatinic acid or silver perchlorate; a boring step for subjecting the substrate surface to etching in a solution containing at least one of hydrofluoric acid and hydrogen peroxide; and a step for removing a stain layer by immersing the substrate into an alkaline solution. A multicrystalline silicon substrate having a lower reflectance is provided at a lower cost.</p>
申请公布号 AU2003242229(A1) 申请公布日期 2003.12.22
申请号 AU20030242229 申请日期 2003.06.06
申请人 KANSAI TECHNOLOGY LICENSING ORGANIZATION CO., LTD. 发明人 HITOSHI MATSUDA;KAZUYA TUJINO;MICHIO MATSUMURA;SHINJI YAE
分类号 H01L21/302;H01L21/306;H01L21/336;H01L31/0236;H01L31/04;H01L31/18;(IPC1-7):H01L21/306 主分类号 H01L21/302
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