发明名称 |
METHOD FOR PRODUCING POLYCRYSTALLINE SILICON SUBSTRATE FOR SOLAR CELL |
摘要 |
<p>Disclosed is a method for producing a multicrystalline silicon substrate for solar cells comprising: a metal deposition step for depositing such metal particles as platinum and silver on the surface of the substrate by electroless-plating chloroplatinic acid or silver perchlorate; a boring step for subjecting the substrate surface to etching in a solution containing at least one of hydrofluoric acid and hydrogen peroxide; and a step for removing a stain layer by immersing the substrate into an alkaline solution. A multicrystalline silicon substrate having a lower reflectance is provided at a lower cost.</p> |
申请公布号 |
AU2003242229(A1) |
申请公布日期 |
2003.12.22 |
申请号 |
AU20030242229 |
申请日期 |
2003.06.06 |
申请人 |
KANSAI TECHNOLOGY LICENSING ORGANIZATION CO., LTD. |
发明人 |
HITOSHI MATSUDA;KAZUYA TUJINO;MICHIO MATSUMURA;SHINJI YAE |
分类号 |
H01L21/302;H01L21/306;H01L21/336;H01L31/0236;H01L31/04;H01L31/18;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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