| 摘要 |
PROBLEM TO BE SOLVED: To provide a dresser for a semiconductor substrate cloth available for removing cloggings in the polishing cloth, stabilizing polishing speed and enabling manufacture of semiconductors of high quality and yield. SOLUTION: This dresser has a diamond particle 1 including a film composed of at least one kind of a carbide selected among a titanium carbide, a zirconium carbide and a chrome carbide blazed in monolayer on a supporting member 3 composed of a metal and/or an alloy using an alloy of 650 deg.C to 1200 deg.C fusing point and also has a metallic carbide layer 4 formed on the interface of the diamond particle 1 and the blazed alloy 2, is used in flattening polishing process of a semiconductor substrate. It is preferable that the metallic carbide covered layer 4 be made through vapor phase method, the thickness be 0.1 to 10μm and the diamond particle 1 be of 50μm of more in diameter but less than 300μm. |
