| 摘要 |
1,218,779. Semi-conductor devices. MOTOROLA Inc. 13 Dec., 1968 [28 Dec., 1967], No. 59412/68. Heading H1K. An integrated circuit is manufactured by providing a monocrystalline semi-conductor body 13 with an insulating layer 12, forming a mechanical support 11 adherent to the layer 12, removing mechanically or chemically part of the thickness of the body 13, epitaxially depositing a further layer 15 of semi-conductor material on the remaining body 13, forming a second insulating layer 16 on the epitaxial layer 15, etching grooves through the layers 16, 15, 13 to isolate islands of monocrystalline material, forming a third insulating layer 17 on the semiconductor surfaces thus exposed, depositing a filler material 18 at least so as to fill the grooves, removing excess filler material down to the surface of the insulating layer 16, and forming circuit components and interconnections respectively in and between the various islands. The semi-conductor material 13, 15 may be Si, the support 11 and the filler 18 being deposited polycrystalline Si. Glass or ceramic may also be used as the filler 18, and the support 11 may be preformed and bonded to the layer 12 by glass. The insulating layers 12, 16, 17 may be SiO 2 or Si 3 N 4 formed thermally or by pyrolytic decomposition of suitable compounds. An additional insulating layer 19 of SiO 2 or Si 3 N 4 may be applied after removal of the excess filler 18, either on to the layer 16 or directly on to the epitaxial layer 15 after removal of the layer 16. |
