摘要 |
A MEMS device is formed from a silicon device layer (9), an intermediate thermal oxide layer (7), and a silicon substrate (5). A microstructure is formed by a removal of material from the device layer (9), where the intermediate layer (7) is resistant to the removal technique, eg, acting as an etch stop layer. The microstructure is released by selective removal of portions of the substrate layer (9) immediately below the microstructure, eg, via a backside etch, followed by removing portions of the intermediate layer (7) beneath the microstructure. Siction is avoided as there is no substrate below the microstructure.
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申请人 |
INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING;TANG, XIAOSONG;CHUA, BEE, LEE;LI, ZHIHONG;NORMAN, C. TIEN;TAY, ENG HOCK, FRANCIS |
发明人 |
TANG, XIAOSONG;CHUA, BEE, LEE;LI, ZHIHONG;NORMAN, C. TIEN;TAY, ENG HOCK, FRANCIS |