| 摘要 |
A method is provided for solving a problem that the fine processing property is degraded by an increase of a current applied to complementarily divided masks in an electron beam projection process. In the method, the complementarily divided masks used for electron projection are used whereby one mask is used for patterns requiring high dimensional accuracy and another is used for other patterns. Consequently, it is possible to lower the current applied to the patterns requiring high dimensional accuracy to realize high printing accuracy. In addition, the highly accurate patterns can be formed at a high throughput. |
