发明名称 |
Method of producing high quality relaxed silicon germanium layers |
摘要 |
A method for minimizing particle generation during deposition of a graded Si1-xGex layer on a semiconductor material includes providing a substrate in an atmosphere including a Si precursor and a Ge precursor, wherein the Ge precursor has a decomposition temperature greater than germane, and depositing the graded Si1-xGex layer having a final Ge content of greater than about 0.15 and a particle density of less than about 0.3 particles/cm<2 >on the substrate.
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申请公布号 |
US2003230233(A1) |
申请公布日期 |
2003.12.18 |
申请号 |
US20030392338 |
申请日期 |
2003.03.19 |
申请人 |
FITZGERALD EUGENE A.;WESTHOFF RICHARD;CURRIE MATTHEW T.;VINEIS CHRISTOPHER J.;LANGDO THOMAS A. |
发明人 |
FITZGERALD EUGENE A.;WESTHOFF RICHARD;CURRIE MATTHEW T.;VINEIS CHRISTOPHER J.;LANGDO THOMAS A. |
分类号 |
C30B25/02;H01L21/20;H01L21/205;(IPC1-7):C30B23/00;C30B25/00;C30B28/12;C30B28/14 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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