发明名称 |
Method for manufacturing semiconductor device |
摘要 |
A method is provided for manufacturing a semiconductor device having a high breakdown voltage transistor and a low breakdown voltage transistor with different driving voltages in a common substrate. The method includes: (a) introducing an impurity of a second conductivity type in a specified region of a semiconductor substrate of a first conductivity type to form a first impurity layer and a second impurity layer; (b) further introducing an impurity of the second conductivity type in a region of the second impurity layer to form a third impurity layer; and (c) conducting a heat treatment to diffuse impurities of the first impurity layer and the third impurity layer to form a first well of the second conductivity type and a second well of the second conductivity type having an impurity concentration higher than the first well.
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申请公布号 |
US2003232490(A1) |
申请公布日期 |
2003.12.18 |
申请号 |
US20030382102 |
申请日期 |
2003.03.05 |
申请人 |
HAYASHI MASAHIRO |
发明人 |
HAYASHI MASAHIRO |
分类号 |
H01L21/76;H01L21/761;H01L21/8234;H01L21/8238;H01L27/092;(IPC1-7):H01L21/425;H01L21/22;H01L21/38 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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