| 摘要 |
A semiconductor memory device includes a memory cell array having a plurality of memory cells, and each of the memory cells includes a first MISFET and a second MISFET. The first MISFET includes a first source region, a first drain region and a first gate electrode, and a semiconductor layer between the first source region and the first drain region is a floating body in a floating state. The second MISFET includes a second source region, a second drain region and a second gate electrode, and the semiconductor layer between the second source region and the second drain region is the floating body shared with the first MISFET.
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