发明名称 THIN FILM DEVICE WITH PERPENDICULAR EXCHANGE BIAS
摘要 <p>A perpendicular exchange biased device (10) comprises a layer of buffer material (14) on a surface of a substrate (12), a layer offerromagnetic material (18) on a surface of the buffer layer, wherein the magnetization of the ferromagnetic layer lies in a direction perpendicular to the plane of the layer of ferromagnetic material, and a layer of antiferromagnetic material (22) on a surface of the layer of ferromagnetic material. A method of making a perpendicular exchange biased device comprising positioning a layer of buffer material on a surface of a substrate, positioning a layer of ferromagnetic material on a surface of the layer of buffer material, wherein the magnetization of the ferromagnetic layer lies in a direction perpendicular to the plane of the layer of ferromagnetic material, and positioning a layer of antiferromagnetic material on a surface of the layer of ferromagnetic material is also included.</p>
申请公布号 WO2003104830(P1) 申请公布日期 2003.12.18
申请号 US2002029708 申请日期 2002.09.19
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