发明名称 |
Method of fabricating memory device |
摘要 |
A method of fabricating a memory device. A plurality of isolation structures and a plurality of stacked gate structures are sequentially formed on a substrate. While defining the stacked gate structures, the isolation structures are over etched to form a plurality of trenches. A material layer is filled into the trenches. A patterned photoresist layer is formed on the substrate, while a part of the substrate predetermined for forming a drain region is exposed. An ion implantation step is performed to implant a dopant into the part of substrate predetermined for forming the drain region, such that a well is formed. As the trenches are filled with the material layer, the dopant cannot penetrate therethrough.
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申请公布号 |
US2003232484(A1) |
申请公布日期 |
2003.12.18 |
申请号 |
US20020064140 |
申请日期 |
2002.06.13 |
申请人 |
HUNG CHIH-WEI;SUNG DA;DU CHIEN-CHIH |
发明人 |
HUNG CHIH-WEI;SUNG DA;DU CHIEN-CHIH |
分类号 |
H01L21/336;H01L21/76;H01L21/8247;H01L27/115;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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