| 摘要 |
<p>The invention concerns a process for generating a feed-through in a semiconductor wafer, which has electric circuitry embedded in a front surface whereby the hole for the feed-through is generated by the combined use of a front side protection layer and a wet KOH etch process etching the hole from the back side of the wafer, where a photomasking process is subsequently used do define the via followed by deposition of the via material.</p> |
