METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE HAVING DUAL DAMASCENE STRUCTURE

摘要

PURPOSE: A method for manufacturing a semiconductor device having a dual damascene structure is provided to be capable of preventing the generation of etching failure without using an etching stop layer. CONSTITUTION: After depositing the first interlayer dielectric(102a) at the upper portion of a predetermined structure of a semiconductor substrate(100), a via hole is formed by selectively patterning the first interlayer dielectric. A gap-fill layer is filled into the via hole. After depositing the second interlayer dielectric on the entire surface of the resultant structure, the second interlayer dielectric is patterned until the surface of the gap-fill layer is exposed for forming a trench. Then, the gap-fill layer is selectively etched.