发明名称 METHOD FOR FABRICATING BUMP WITH ELECTROLESS NICKEL PLATING LAYER
摘要 PURPOSE: A method for fabricating a bump with an electroless nickel plating layer is provided to interconnect products with a large number of pins by performing an electroless plating process, and to prevent the pitch between bumps from being influenced by a lateral growth by performing an etch process after the electroless plating process. CONSTITUTION: An input/output pad(12) and a passivation layer(14) are formed of a predetermined pattern, included in a side surface of an integrated circuit chip(10). The side surface of the integrated circuit chip is cleaned in a pretreatment process. A zincate process is performed on the surface of the input/output pad of the cleaned integrated circuit chip to distribute zinc atoms to the surface of the input/output pad. Nickel is electroless-plated on the side surface of the integrated circuit chip. Photoresist(18) of a pattern corresponding to the input/output pad is formed on the nickel plating layer(16). While the photoresist of a predetermined pattern is applied, the nickel layer exposed to the outside is etched to leave the nickel plating layer corresponding to the input/output pad. The photoresist is eliminated from the nickel plating layer. Gold of a predetermined thickness is plated on the nickel plating layer from which the photoresist is removed.
申请公布号 KR20030094694(A) 申请公布日期 2003.12.18
申请号 KR20020031950 申请日期 2002.06.07
申请人 SAMSUNG TECHWIN CO., LTD. 发明人 CHO, CHEOL NAE;CHOI, U SEOK;KIM, YONG NAM;LEE, JIN U
分类号 H01L21/60;(IPC1-7):H01L21/60 主分类号 H01L21/60
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