SEMICONDUCTOR MEMORY DEVICE PROVIDED WITH ARRAY VOLTAGE CONTROL CIRCUIT CONSISTING OF A PLURALITY OF FEEDBACK LOOPS

摘要

PURPOSE: A semiconductor memory device provided with an array voltage control circuit consisting of a plurality of feedback loops is provided to obtain more stable array voltage control operation than that of a conventional array voltage control circuit by reducing the load for output of the feedback amplifier to manage. CONSTITUTION: A semiconductor memory device provided with an array voltage control circuit consisting of a plurality of feedback loops includes a power line structure(10), a plurality of feedback loops and a plurality of array voltage control circuits(50a,50b). The power line structure(10) covers the memory cell region so as to maintain the array voltage used at a single memory cell array region to a predetermined level. The plurality of feedback loops are separately connected to the power line structure(10). And, the array voltage is independently supplied to the power line structure(10) through a plurality of paths.