PURPOSE: An electrostatic discharge(ESD) protection thyristor is provided to reduce a trigger voltage of a thyristor and improve an ESD characteristic by forming a gate-coupled thyristor(GCT) using a gate coupling concept in a device structure functioning as the thyristor. CONSTITUTION: The ESD protection thyristor uses a field oxide layer or a thick oxide layer as a gate oxide layer, including a gate coupling thyristor structure to prevent static electricity of a high voltage device. The gate coupling operation is performed according to a difference of time interval between the rising/falling time of an input/output signal and the rising/falling time of an ESD pulse.
申请公布号
KR20030094673(A)
申请公布日期
2003.12.18
申请号
KR20020031918
申请日期
2002.06.07
申请人
HAN, MIN GOO
发明人
HA, MIN U;HAN, MIN GOO;JI, IN HWAN;JUN, BYEONG CHEOL;LEE, SEUNG CHEOL;LEE, YU SANG;OH, JAE GEUN;SIM, JIN SEOP