| 摘要 |
A method of determining reliability of semiconductor products. The method comprises providing a semiconductor wafer, which comprises a plurality of MOS transistors formed on its surface, and placing the semiconductor wafer in an environment of a stress temperature during a testing time period. The MOS transistor is simultaneously stressed with a stress voltage. A plurality of testing points are defined in the testing time, and the threshold voltage shift of the MOS transistor is measured at each testing point for establishing a group of experimental data. Finally, a relationship model of threshold voltage shift (DeltaVth) vs. time (t) is provided, and the group of experimental data and the relationship model are used to depict a relation curve for predicting the threshold voltage shift of the MOS transistor when exceeding the testing time.
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