| 摘要 |
Provided is a method of manufacturing a ferroelectric capacitor capable of manufacturing a ferroelectric capacitor with lower unevenness on a ferroelectric film surface, and thereby with excellent electric characteristics. By sputtering method, a PZT film is formed on a first conductive film, which constitutes a lower electrode of the ferroelectric capacitor. Thereafter, the PZT film is subjected to crystallization treatment (annealing). Next, a silicate solution is coated on the PZT film as a sintering assistance and then dried. Subsequently, sintering treatment is performed at the temperature of about 700C.°. In this way, crystals constituting the PZT film are sintered, unevenness on the surface of PZT film is reduced, and tiny pores in grain boundaries are also reduced.
|
