METHOD FOR FORMING PASSIVATION LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a passivation layer of a semiconductor device is provided to uniformly distribute the external stress applied to the passivation layer to an underlying layer through a flat interface under a pressurized condition by improving the structure for buffering the external stress and reducing the concentration of the stress in a packaging process of the semiconductor device. CONSTITUTION: An insulator(20) is deposited on a silicon substrate(10). A patterning process and a dry etch process are performed on the deposited insulator to form a metal interconnection(30). A silicon oxide layer as an insulation layer having such a thickness to prevent the stress concentration is deposited on the metal interconnection under an externally pressurized condition. A chemical mechanical polishing(CMP) process is performed. A buffering SiO2 layer(80) is deposited on the resultant pattern. After the buffering SiO2 layer is healed in an H2 atmosphere, plasma enhanced(PE)-Si3N4(90) is deposited to form the passivation layer.