发明名称 |
VERY LOW VOLTAGE, HIGH EFFICIENCY PHOSPHORESCENT OLED IN A P-I-N STRUCTURE |
摘要 |
Abstract of the Disclosure An organic light emitting device is provided, having a p-doped organic layer, an n-doped layer, and a phosphorescent emissive layer disposed between the p-doped and n-doped layers. Blocking layers are used to confine electrons, holes, and excitons in the emissive layer. A device having a cathode on the top is provided, as well as an "inverted"device having a cathode on the bottom.
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申请公布号 |
US2003230980(A1) |
申请公布日期 |
2003.12.18 |
申请号 |
US20020173682 |
申请日期 |
2002.06.18 |
申请人 |
FORREST STEPHEN R;PFEIFFER MARTIN |
发明人 |
FORREST STEPHEN R;PFEIFFER MARTIN |
分类号 |
H01L51/00;H01L51/30;H01L51/40;H01L51/50;H05B33/10;(IPC1-7):H01L35/24 |
主分类号 |
H01L51/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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