发明名称 VERY LOW VOLTAGE, HIGH EFFICIENCY PHOSPHORESCENT OLED IN A P-I-N STRUCTURE
摘要 Abstract of the Disclosure An organic light emitting device is provided, having a p-doped organic layer, an n-doped layer, and a phosphorescent emissive layer disposed between the p-doped and n-doped layers. Blocking layers are used to confine electrons, holes, and excitons in the emissive layer. A device having a cathode on the top is provided, as well as an "inverted"device having a cathode on the bottom.
申请公布号 US2003230980(A1) 申请公布日期 2003.12.18
申请号 US20020173682 申请日期 2002.06.18
申请人 FORREST STEPHEN R;PFEIFFER MARTIN 发明人 FORREST STEPHEN R;PFEIFFER MARTIN
分类号 H01L51/00;H01L51/30;H01L51/40;H01L51/50;H05B33/10;(IPC1-7):H01L35/24 主分类号 H01L51/00
代理机构 代理人
主权项
地址