发明名称 Capacitor with high voltage breakdown threshold
摘要 A high voltage capacitor has a monolithic body made of layers of dielectric material and further has first and second external contacts located on the body. First and second nonoverlapping electrodes electrically connected to the respective first and second contacts are located on respective first and second layers of dielectric material within the body. A floating electrode not connected to either of the contacts is located on a different, third layer of dielectric material. The floating electrode overlaps the first and second electrodes and forms two serially connected capacitors therewith.
申请公布号 US2003231455(A1) 申请公布日期 2003.12.18
申请号 US20030413015 申请日期 2003.04.14
申请人 DEVOE DANIEL F. 发明人 DEVOE DANIEL F.
分类号 H01G4/00;H01G4/005;H01G4/20;H01G4/30;H01G4/35;H03H7/01;(IPC1-7):H01G4/00 主分类号 H01G4/00
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