| 摘要 |
Within a method for fabricating a microelectronic fabrication, and the microelectronic fabrication fabricated employing the method, there is formed over a substrate a first capacitor structure comprising a pair of first capacitor plate layers and a second capacitor structure comprising a pair of second capacitor plate layers. Within the method and the resulting microelectronic fabrication, the pair of first capacitor plate layers within the first capacitor structure is electrically isolated, at least in part vertically separated and at least in part horizontally overlapped with respect to the pair of second capacitor plate layers within the second capacitor structure. The method provides the resulting microelectronic fabrication with enhanced and performance.
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