| 摘要 |
In the method of forming fine patterns of a semiconductor integrated circuit, a mask layer is formed over a semiconductor structure having a first region and a second region. A portion of the mask layer over the first region is removed to expose the semiconductor structure, and sacrificial layer patterns are formed over the exposed semiconductor structure. Then, spacers are formed on sidewalls of the sacrificial layer patterns and the mask layer, and portions of the spacers are removed to create fine mask patterns. The semiconductor structure is then patterned using the fine mask patterns to create fine patterns.
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