| 摘要 |
PURPOSE: A method for fabricating a phase shift mask is provided to prevent a pattern defect caused by a damaged surface of a mask main body by performing a dry etch process using etch reaction gas including chlorine in patterning a phase shift material layer. CONSTITUTION: The phase shift material layer(110) is formed on the surface of a plate. A predetermined mask pattern is formed on the phase shift material layer to form photoresist. The mask main body(100) includes the phase shift material layer and the photoresist. A mask pattern is formed on the phase shift material layer is formed through a dry etch method wherein etch reaction gas including chlorine is used and the photoresist having the mask pattern is used as a mask.
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