| 摘要 |
A vertical cavity surface emitting laser (VCSEL) capable of producing long-wavelength light has a substrate of InP and an active region with alternating quantum wells and barrier layers. The target wavelength range is preferably between 1.2-1.4 um. The quantum well is made of AlGaAsSb or GaAsSb, and the barrier layers are made of AlGaAsSb, AlInGaAs, or AlInAs. The active region is sandwiched between two mirror stacks that are preferably epitaxially grown Distributed Bragg Reflectors. The active region has large conduction and valence band offsets (DeltaEc and DeltaEv) for effective carrier containment over the wide range of ambient temperatures in which the VCSEL is expected to function. The active region can be designed to have little or no lattice strain on the InP substrate.
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