发明名称 |
High aspect ratio fill method and resulting structure |
摘要 |
A method is described for filling of high aspect ratio contact vias provided over silicon containing areas. A via is formed in an insulating layer over the silicon containing area and a silicide forming material is deposited in the via. A silicide region is formed over the silicon containing area, the silicide forming material is removed from the via leaving the silicide region. The via is then filled with a conductor using an electroless plating process.
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申请公布号 |
US2003230808(A1) |
申请公布日期 |
2003.12.18 |
申请号 |
US20020156097 |
申请日期 |
2002.05.29 |
申请人 |
SINHA NISHANT;MORGAN PAUL A. |
发明人 |
SINHA NISHANT;MORGAN PAUL A. |
分类号 |
H01L21/288;H01L21/768;(IPC1-7):H01L23/48;H01L23/52 |
主分类号 |
H01L21/288 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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