| 摘要 |
The present invention discloses a chemical amplified photoresist composition including a polymer having a repeated unit of the formula (II), wherein R<1 >is H, haloalkyl group or C1-C4 alkyl group; R<2 >is hydroxyl group, C1-C8 alkoxy group or C1-C8 thioalkyl group; G is (CH2)n, O or S, wherein n is 0, 1, 2, 3 or 4; Rc is a lactone group; and m is 1, 2 or 3. The chemical amplified photoresist composition of the present invention can be applied to general lithography processes, and particularly to the lithography of ArF, KrF or the like light sources, and exhibit excellent resolution, figures and photosensitivity.
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