| 摘要 |
<p>A plasma processing device comprises a chamber (1) for performing plasma processing in the inside of the chamber, a top plate (15) for closing the upper side of the chamber (1) and is formed from a dielectric, and an antenna section (3) as high frequency wave supplying means for supplying high frequency waves into the chamber (1) through the top plate (15). The top plate (15) is provided in its inside with reflection members (23a, 23b). Side walls of the reflection members (23a, 23b) act as wave reflection means for reflecting high frequency waves propagated in the top plate (15) in its radial direction. Alternatively, side walls of a concave portion in the top plate (15) can be used as the wave reflection means without using the reflection members.</p> |
