发明名称 SWITCH
摘要 A high isolation switch capable of responding at a high rate at a lower DC potential. The switch employs a microstructure group (103) consisting of microstructures (102a, 102b, 102c) and moves each microstructure (102a, 102b, 102c) slightly to obtain a large movement as the group. Consequently, the DC potentials being applied to the control electrodes (106a, 106b, 107a, 107b, 108a, 108b, 109a, 109b) of individual microstructures (102a, 102b, 102c) can be reduced. A high isolation switch (100) capable of responding at a high rate and operating at a lower DC voltage can thereby be realized.
申请公布号 WO03105175(A1) 申请公布日期 2003.12.18
申请号 WO2003JP07106 申请日期 2003.06.05
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;NAKANISHI, YOSHITO;NAKAMURA, KUNIHIKO 发明人 NAKANISHI, YOSHITO;NAKAMURA, KUNIHIKO
分类号 B81B3/00;H01H59/00;(IPC1-7):H01H59/00 主分类号 B81B3/00
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