摘要 |
A high isolation switch capable of responding at a high rate at a lower DC potential. The switch employs a microstructure group (103) consisting of microstructures (102a, 102b, 102c) and moves each microstructure (102a, 102b, 102c) slightly to obtain a large movement as the group. Consequently, the DC potentials being applied to the control electrodes (106a, 106b, 107a, 107b, 108a, 108b, 109a, 109b) of individual microstructures (102a, 102b, 102c) can be reduced. A high isolation switch (100) capable of responding at a high rate and operating at a lower DC voltage can thereby be realized.
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申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;NAKANISHI, YOSHITO;NAKAMURA, KUNIHIKO |
发明人 |
NAKANISHI, YOSHITO;NAKAMURA, KUNIHIKO |