| 摘要 |
PURPOSE: A fabrication method of semiconductor devices is provided to effectively prevent diffusion of hydrogen by using a zirconium-aluminum oxide(ZrAlxO) as a hydrogen diffusion barrier layer. CONSTITUTION: A zirconium target(104) and an aluminum target(105) are mounted in a chamber(100) of PVD(Physical Vapor Deposition). Mixed gases of argon(Ar) and oxygen(O2) are supplied to the PVD chamber(100). Argon ions in argon plasma are collided with the zirconium target(104) and the aluminum target(105). By reacting zirconium and aluminum ion from the target to the oxygen gas, a zirconium-aluminum oxide(ZrAlxO)(108) as a hydrogen diffusion barrier layer is deposited on a wafer(101). Then, the densification processing and oxygen-filling processing of the ZrAlxO(108) are performed.
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