| 发明名称 |
METHOD FOR THE PRODUCTION OF A HETERO-BIPOLAR TRANSISTOR, AND HETERO-BIPOLAR TRANSISTOR |
| 摘要 |
The invention relates to a hetero-bipolar transistor on Ga-As basis which ha s an advantageous design and to a method for producing the same which allows production of inexpensive and long-term stable components.
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| 申请公布号 |
CA2484791(A1) |
申请公布日期 |
2003.12.18 |
| 申请号 |
CA20032484791 |
申请日期 |
2003.05.30 |
| 申请人 |
UNITED MONOLITHIC SEMICONDUCTORS GMBH |
发明人 |
BEHAMMER, DAG |
| 分类号 |
H01L21/331;H01L29/737;(IPC1-7):H01L29/737 |
主分类号 |
H01L21/331 |
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