| 摘要 |
A stack-gate non-volatile memory device with a tapered floating-gate structure is disclosed by the present invention, in which the tapered floating-gate structure offers a longer effective channel length to alleviate the punch-through effect and a larger surface area for erasing or programming between the tapered floating-gate structure and the integrated common-source/drain conductive structure. The stack-gate non-volatile memory devices of the present invention are implemented into three contactless array architectures: a contactless NOR-type array, a contacless NAND-type array, and a contactless parallel common-source/drain conductive bit-lines array. The features and advantages of the contactless memory arrays are a smaller cell size of 4F<2>, a smaller common-source/drain bus-line resistance and capacitance, a higher erasing speed, and a smaller bit/word-line resistance and capacitance, as compared to the prior arts.
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