发明名称 |
Phase change memory cell and manufacturing method thereof using minitrenches |
摘要 |
The phase change memory cell is formed by a resistive element and by a memory region of a phase change material. The resistive element has a first thin portion having a first sublithographic dimension in a first direction; and the memory region has a second thin portion having a second sublithographic dimension in a second direction transverse to the first dimension. The first thin portion and the second thin portion are in direct electrical contact and define a contact area of sublithographic extension. The second thin portion is delimited laterally by oxide spacer portions surrounded by a mold layer which defines a lithographic opening. The spacer portions are formed after forming the lithographic opening, by a spacer formation technique.
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申请公布号 |
US2003231530(A1) |
申请公布日期 |
2003.12.18 |
申请号 |
US20030372761 |
申请日期 |
2003.02.20 |
申请人 |
STMICROELECTRONICS S.R.L.;OVONYX INC. |
发明人 |
BEZ ROBERTO;PELLIZZER FABIO;TOSI MARINA;ZONCA ROMINA |
分类号 |
G11C11/56;H01L27/24;H01L45/00;(IPC1-7):G11C29/00 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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