Bit line structure comprises a surface bit line, a trenched bit line, a trench isolation layer, a covering isolation layer, covering connecting layers, and self-adjusting connecting layers

摘要

Bit line structure comprises a surface bit line for joining a number of first doping regions above a substrate surface, a trenched bit line for joining a number of second doping regions within the substrate (1, 2, 3), a trench isolation layer (6) on a surface of a trench, a covering isolation layer (9) on the trenched bit line in a first upper partial region of the trench, a number of covering connecting layers (12) on the trenched bit line in a second partial region of the trench, and a number of self-adjusting connecting layers (13) in the region of the substrate surface. The covering connecting layers are electrically connected to the second doping regions via the self-adjusting connecting layers. An Independent claim is also included for a process for the production of a bit line structure.