DISPLAY UNIT AND PRODUCTION METHOD THEREFOR, AND PROJECTION TYPE DISPLAY UNIT

摘要

A display unit capable of enhancing the light resistance itself of a pixel transistor without depending on a shielding structure, and a production method therefore, wherein the average crystal grain size of a polycrystalline silicon film (111) serving as the active layer of a pixel transistor is controlled to be comparatively small to thereby restrict an optical leak current. The smaller the crystal grain size, the more crystal defect are contained. Carriers excited by light irradiation are quickly supplemented by a defect level to restrict an increase in optical leak current. On the other hand, the average crystal particle size of a polycrystalline silicon film (111) constituting a peripheral transistor is controlled to be comparatively large. The larger a crystal particle size, the higher the mobility of carriers and therefore the higher the driving capability of a peripheral transistor. This is because a peripheral transistor requires a faster operation than a pixel transistor due to pixel scanning and image signal sampling requirements.