| 摘要 |
PURPOSE: A dual damascene process is provided to be capable of simplifying the process for reducing process cost and improving yield and quality by carrying out a two-step dry etching process at an oxide layer. CONSTITUTION: After sequentially depositing a metal layer(30), a SiN layer(32), and an insulating layer(34), the first photoresist pattern is formed at the first predetermined upper portion of the insulating layer. The first dry etching process is carried out at the insulating layer by using the first photoresist pattern as an etching mask, After removing the first photoresist pattern, the second photoresist pattern is formed at the second predetermined upper portion of the insulating layer. The second dry etching process is carried out at the insulating layer by using the second photoresist pattern as an etching mask, while completely removing the insulating layer of a via hole region. Preferably, a copper layer is used as the metal layer.
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