METHOD FOR FABRICATING SILICIDE OF SEMICONDUCTOR

摘要

PURPOSE: A method for fabricating silicide of a semiconductor is provided to form uniform cobalt silicide in a heat treatment process by depositing a titanium layer between cobalt layers while using sputtering equipment. CONSTITUTION: A gate structure composed of poly made of a polycrystalline electrode and a spacer made of a nitride layer is formed on a silicon substrate including an active region. The titanium layer(200) for forming cobalt silicide is formed on the gate structure. The cobalt layers(100,300) are deposited on and under the titanium layer. A heat treatment process is performed on the titanium layer between the cobalt layers so that the cobalt layer is diffused to the inside of the grains of the cobalt silicide. The cobalt layer, the titanium layer and the titanium nitride layer(400) are removed so that the cobalt silicide with low resistance and stability is continuously and uniformly formed on the active region and the polycrystalline gate.