| 摘要 |
New photoresists arc provided that arc suitable for short wavelength imaging, including sub-300nm and sub-200 nm such as 193 nm and 157 nm. Photoresists of the invention contain a resin with photoacid-labile groups, one or more photoacid generator compounds, and an adhesion-promoting additive compound. Photoresists of the invention can exhibit significant adhesion to SiON and other inorganic surface layers. |
