发明名称 Manufacturing method for lithography masks
摘要 A method for forming, on a mask, a mask pattern used for exposure. The mask pattern includes a first pattern that blends plural types of patterns, and second pattern that is smaller in size than the first pattern. The mask pattern is arranged on the mask so that the first pattern may be resolved and the second pattern is restrained from being resolved. The method includes the steps of classifying the first pattern into one of a periodic pattern having at least three elements having two equal intervals in at least one direction among two orthogonal directions, an isolated pair pattern that does not belong to the periodic pattern and includes a pair of elements arranged in at least one direction among the two orthogonal directions, and an isolated element that does not belong to the isolated pair pattern and includes only one element without constituting any pair in any of the two orthogonal directions, arranging the second pattern for the isolated pair pattern, arranging the second pattern for the isolated element, and arranging the second pattern for the periodic pattern. <IMAGE>
申请公布号 EP1372032(A1) 申请公布日期 2003.12.17
申请号 EP20020256537 申请日期 2002.09.20
申请人 CANON KABUSHIKI KAISHA 发明人 SUGITA, MITSURO;YAMAZOE, KENJI;SAITOH, KENJI
分类号 G03F1/42;G03F1/36;G03F1/68;G03F1/70;G03F1/76;G03F7/20;H01L21/027 主分类号 G03F1/42
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