| 发明名称 |
SOLID-STATE DEVICE AND ITS MANUFACTURING METHOD |
| 摘要 |
<p>The present invention provides a solid device having a layered structure inwhich a filmhaving a lowdielectric constant serves as an interlayer insulating film or a protective membrane which will hardly undergo separation, andmethod for fabrication thereof. <??>A boron-carbon-nitrogen film is used as interlayer insulating films 5A to 5C, and as a passivation membrane of a semiconductor device. <IMAGE></p> |
| 申请公布号 |
EP1372188(A1) |
申请公布日期 |
2003.12.17 |
| 申请号 |
EP20020701625 |
申请日期 |
2002.02.28 |
| 申请人 |
KABUSHIKI KAISHA WATANABE SHOKO;SUGINO, TAKASHI |
发明人 |
SUGINO, TAKASHI;KUSUHARA, MASAKI;UMEDA, MASARU |
| 分类号 |
H01L21/318;H01L21/768;H01L21/77;H01L21/84;H01L23/532;H01L27/06;H01L27/12;(IPC1-7):H01L21/314 |
主分类号 |
H01L21/318 |
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