发明名称 Process for etching thin-film layers of a workpiece used to form microelectronic circuits or components
摘要 A process for removing at least one thin-film layer from a surface of a workpiece pursuant to manufacturing a microelectronic interconnect or component is set forth. Generally stated, the process comprises the oxidation of at least a portion of the at least one thin-film layer and the etching of the oxidized thin-film layer using an etchant that selectively etches primarily the oxidized thin-film layer.
申请公布号 US6664197(B2) 申请公布日期 2003.12.16
申请号 US20010999112 申请日期 2001.11.01
申请人 SEMITOOL, INC. 发明人 STEVENS E. HENRY;PFEIFFER RICHARD
分类号 B08B3/04;C23F1/18;H01L21/00;H01L21/3213;H01L21/768;(IPC1-7):C09K13/04;H01L21/461 主分类号 B08B3/04
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