发明名称 |
Self-aligned barrier formed with an alloy having at least two dopant elements for minimized resistance of interconnect |
摘要 |
For fabricating an interconnect structure within a dielectric material comprised of at least one dielectric reactant element, an interconnect opening formed within the dielectric material is filled with a conductive fill material comprised of first and second dopant elements that are different. A diffusion barrier material, that surrounds the conductive fill material, is formed from a reaction of the first dopant element and a dielectric reactant element. Also, a boundary material, that surrounds the conductive fill material, is formed from a reaction of the second dopant element and a dielectric reactant element. The boundary material prevents diffusion of a dielectric reactant element from the dielectric material into the conductive fill material.
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申请公布号 |
US6664185(B1) |
申请公布日期 |
2003.12.16 |
申请号 |
US20020132235 |
申请日期 |
2002.04.25 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
WANG PIN-CHIN C.;WANG FEI |
分类号 |
H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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