发明名称 |
Method of improving the interlayer adhesion property of low-k layers in a dual damascene process |
摘要 |
The present invention provides for an improvement of the interlayer adhesion property of the low-K layers in a dual damascene process. The method includes a shallow ion implantation process to bombard a bottom low-k layer for forming a densified layer on the bottom low-k layer. The densified layer can be a used as a substitute in the oxidation of the prior art to avoid the peeling phenomenon between the organic low-k layers.
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申请公布号 |
US6664182(B2) |
申请公布日期 |
2003.12.16 |
申请号 |
US20010840994 |
申请日期 |
2001.04.25 |
申请人 |
MACRONIX INTERNATIONAL CO. LTD. |
发明人 |
JENG PEI-REN |
分类号 |
H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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