| 摘要 |
Surface-emitting diode emission source (1) with an active layer (10) used to create optical emissions (101, 102, 103) that is located between a confinement layer (11) consisting of semi-conductor material of a conductivity type (n) and a confinement layer (12) consisting of semi-conductor material of a conductivity type (p) opposed to the first conductivity type (n), whereby an attenuation device (20) is present to suppress the emission components (103) spreading in direction (C) parallel to the layer plane (100) of the active layer (10). Advantage: Output of emission components spreading essentially perpendicular to the layer plane is improved.
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