发明名称 High frequency differential amplification circuit with reduced parasitic capacitance
摘要 Disclosed is a circuit layout of a differential amplification circuit that constitutes a Gilbert cell, in which two multiple finger bipolar transistors forming a differential amplifier are positioned substantially axially symmetrical to each other. The longitudinal direction of each finger is orthogonal to the axis of symmetry. A wiring connected to an emitter electrode of each one of the transistors is laid so as to extend in a direction opposite to the other one of the transistors.
申请公布号 US6664609(B2) 申请公布日期 2003.12.16
申请号 US20020103044 申请日期 2002.03.21
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 ITO JUNJI;IMANISHI IKUO
分类号 H01L27/06;H01L21/8222;H01L27/082;H01L29/06;H01L29/08;H01L29/10;H01L29/732;H03D7/14;H03F3/45;(IPC1-7):H01L29/00 主分类号 H01L27/06
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