发明名称 |
High frequency differential amplification circuit with reduced parasitic capacitance |
摘要 |
Disclosed is a circuit layout of a differential amplification circuit that constitutes a Gilbert cell, in which two multiple finger bipolar transistors forming a differential amplifier are positioned substantially axially symmetrical to each other. The longitudinal direction of each finger is orthogonal to the axis of symmetry. A wiring connected to an emitter electrode of each one of the transistors is laid so as to extend in a direction opposite to the other one of the transistors.
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申请公布号 |
US6664609(B2) |
申请公布日期 |
2003.12.16 |
申请号 |
US20020103044 |
申请日期 |
2002.03.21 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
ITO JUNJI;IMANISHI IKUO |
分类号 |
H01L27/06;H01L21/8222;H01L27/082;H01L29/06;H01L29/08;H01L29/10;H01L29/732;H03D7/14;H03F3/45;(IPC1-7):H01L29/00 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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