发明名称 |
Reference current generating circuit of multiple bit flash memory |
摘要 |
The reference current generation circuit of a multiple bit flash memory. An identical boosted word-line voltage is applied to the gate terminal of reference memory cells in different reference current generation units and a different substrate voltage is applied to the substrate of each reference memory cell so that different reference currents are produced. This arrangement reduces different degree of shifting in the reference currents due to temperature and source voltage Vcc variation.
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申请公布号 |
US6665212(B1) |
申请公布日期 |
2003.12.16 |
申请号 |
US20020065032 |
申请日期 |
2002.09.12 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
FAN TSO-HUNG;YEH CHIH-CHIEH;LU TAO-CHENG |
分类号 |
G11C11/56;G11C16/30;(IPC1-7):G11C16/06 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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