发明名称 |
Semiconductor laser unit having optical guide layers with increased total thickness and employing junction-up configuration |
摘要 |
A semiconductor laser device is bonded to a heat sink. The semiconductor laser device contains a stripe structure having a width equal to or greater than 10 micrometers, and including a first optical guide layer of a first conductivity type, an active layer, and a second optical guide layer of a second conductivity type. A total thickness of the first and second optical guide layers is equal to or more than 0.5 micrometers. The semiconductor laser device is soldered onto the heat sink at a surface of the semiconductor laser device where the surface located is farther from the active layer than other surfaces of the semiconductor laser device.
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申请公布号 |
US6665324(B1) |
申请公布日期 |
2003.12.16 |
申请号 |
US20000514327 |
申请日期 |
2000.02.28 |
申请人 |
FUJI PHOTO FILM CO., LTD. |
发明人 |
ASANO HIDEKI |
分类号 |
H01L33/02;H01L33/46;H01L33/62;H01S5/00;H01S5/024;H01S5/20;H01S5/22;H01S5/223;(IPC1-7):H01S5/00 |
主分类号 |
H01L33/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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