发明名称 |
Method and structure for determining a concentration profile of an impurity within a semiconductor layer |
摘要 |
A method and a structure are provided for measuring a concentration of an impurity within a layer arranged upon a semiconductor substrate. The method may include exposing the layer and semiconductor substrate to oxidizing conditions and determining a difference in total dielectric thickness above the substrate from before to after exposing the layer and substrate. The difference may be correlated to a concentration of the impurity. In some cases, the method may include designating a plurality of measurement locations on the layer such that a concentration profile of the impurity within the layer may be determined. In some embodiments, exposing the layer and substrate may include forming an oxidized interface between the layer and the semiconductor substrate. Preferably, the oxidized interface is thicker underneath portions of the layer with a lower concentration of the impurity than underneath portions of the layer with a higher concentration of the impurity.
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申请公布号 |
US6664120(B1) |
申请公布日期 |
2003.12.16 |
申请号 |
US20010023065 |
申请日期 |
2001.12.17 |
申请人 |
CYPRESS SEMICONDUCTOR CORP. |
发明人 |
NARAYANAN SUNDAR;RAMKUMAR KRISHNASWAMY |
分类号 |
G01N1/32;G01N19/06;H01L21/66;H01L23/544;(IPC1-7):H01L21/66 |
主分类号 |
G01N1/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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