发明名称 |
Graded LDD implant process for sub-half-micron MOS devices |
摘要 |
A process for grading the junctions of a lightly doped drain (LDD) N-channel MOSFET by performing a low dosage phosphorous implant after low and high dosage arsenic implants have been performed during the creation of the N- LDD regions and N+ source and drain electrodes. The phosphorous implant is driven to diffuse across both the electrode/LDD junctions and the LDD/channel junctions.
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申请公布号 |
US6664600(B2) |
申请公布日期 |
2003.12.16 |
申请号 |
US20020229861 |
申请日期 |
2002.08.27 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
AHMAD AFTAB;DENNISON CHARLES |
分类号 |
H01L21/28;H01L21/336;H01L21/8238;H01L29/10;H01L29/78;(IPC1-7):H01L23/62 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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