| 摘要 |
In order to achieve a maximally space-saving configuration of a matricial memory arrangement (1), for example in the form of a non-volatile flash memory, which comprises a plurality of memory cells (3) grouped into memory sectors (2), it is proposed to use regular memory cells (4) of this memory arrangement (1) as sector switches for selecting/activating the respective memory sector (2). In order to avoid the effect of high voltages on the threshold voltage of the memory cells (4) configured as sector switches, the "floating gate" (FG) of these memory cells (4) may be short-circuited to the "control gate" (CG).
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